Central CMPD2005S Service Manual
CMPD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (6-August 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD2005S contains two (2) High Voltage
Silicon Switching Diodes, manufactured by the
epitaxial planar process, epoxy molded in a
SOT-23 surface mount package, designed for
applications requiring high voltage capability.
MARKING CODE: DB5
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
300 V
Peak Repetitive Reverse Voltage V
RRM
350 V
Peak Repetitive Reverse Current I
O
200 mA
Continuous Forward Current I
F
225 mA
Peak Repetitive Forward Current I
FRM
625 mA
Forward Surge Current, tp= 1µs I
FSM
4.0 A
Forward Surge Current, tp= 1s I
FSM
1.0 A
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
R
VR=280V 100 nA
I
R
VR=280V, TA=150°C 100 µA
BV
R
IR=100µA 350 V
V
F
IF=20mA 0.87 V
V
F
IF=100mA 1.0 V
V
F
IF=200mA 1.25 V
C
T
VR=0, f=1.0 MHz 5.0 pF
t
rr
IR=IF=30mA, Rec. to 3.0mA, RL=100Ω 50 ns
查询CMPD2005S供应商
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
R1 (6-August 2003)
MARKING CODE: DB5
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
2
D1 D2
3
1
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