Central CMPD2003, CMPD2004, CMPD2004S Service Manual
查询CMPD2003供应商
CMPD2003
CMPD2004
CMPD2004S
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
HIGH VOLTAGE
SWITCHING DIODE
SOT-23 CASE
The following configurations are available:
CMPD2003 SINGLE MARKING CODE: A82
CMPD2004 SINGLE MARKING CODE: D53
CMPD2004S DUAL, IN SERIES MARKING CODE: DB6
MAXIMUM RATINGS (TA=25oC)
SYMBOL CMPD2003 CMPD2004S UNITS
Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Peak Repetitive Reverse Current I
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 µs I
Forward Surge Current, tp=1 s I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
R
RRM
O
F
FRM
FSM
FSM
D
stg
JA
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD2003, CMPD2004, CMPD2004S types
are silicon switching diodes manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
CMPD2004
200 240 V
250 300 V
200 200 mA
250 225 mA
625 625 mA
4000 4000 mA
1000 1000 mA
350 mW
-65 to +150
357 oC/W
o
C
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CMPD2004
CMPD2003 CMPD2004S
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNIT
B
VR
I
R
I
R
I
R
I
R
V
F
IR=100 µA 250 300 V
VR=200V 100 - nA
VR=200V, TA=150oC 100 - µA
VR=240V - 100 nA
VR=240V, TA=150oC - 100 µA
IF=100mA 1.0 1.0 V
132
CMPD2004
CMPD2003 CMPD2004S
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNIT
V
F
C
T
t
rr
All dimensions in inches (mm).
IF=200mA 1.25 - V
VR=0, f=1 MHz 5.0 5.0 pF
IF=IR=30mA, RECOV. TO 3.0mA,
RL=100Ω
50 50 ns
NO
CONNECTION
A
C1
A1, C2C
CMPD2003
CMPD2004 CMPD2004S
133
A2
R2
Loading...