Central CJD122, CJD127 Service Manual
CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122,
CJD127 types are Complementary Silicon Power
Darlington Transistors manufactured in a surface
mount package designed for low speed switching
and amplifier applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
100 V
Emitter-Base Voltage V
EBO
5.0 V
Continuous Collector Current I
C
8.0 A
Peak Collector Current I
CM
16 A
Base Current I
B
120 mA
Power Dissipation P
D
20 W
Power Dissipation (TA=25°C) P
D
1.75 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JC
6.25 °C/W
Thermal Resistance Θ
JA
71.4 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CEO
VCE=50V 10 µA
I
CEV
VCE=100V, V
BE(off)
=1.5V 10 µA
I
CEV
VCE=100V, V
BE(off)
=1.5V, TC=125oC 500 µA
I
CBO
VCB=100V 10 µA
I
EBO
VEB=5.0V 2.0 mA
BV
CEO
IC=30mA 100 V
V
CE(SAT)
IC=4.0A, IB=16mA 2.0 V
V
CE(SAT)
IC=8.0A, IB=80mA 4.0 V
V
BE(SAT)
IC=8.0A, IB=80mA 4.5 V
V
BE(ON)
VCE=4.0V, IC=4.0A 2.8 V
h
FE
VCE=4.0V, IC=4.0A 1000 12000
h
FE
VCE=4.0V, IC=8.0A 100
f
T
VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz (CJD122) 200 pF
C
ob
VCB=10V, IE=0, f=1.0MHz (CJD127) 300 pF
h
fe
VCE=4.0V, IC=3.0A, f=1.0kHz 300
查询CJD122供应商
Central
Semiconductor Corp.
TM
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
R1 (26-September 2002)
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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