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查询BAS56供应商
BAS56
DUAL HIGH CURRENT
SWITCHING DIODE
SOT-143 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 µsec. I
Forward Surge Current, tp=1 sec. I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
R
RRM
F
FRM
FSM
FSM
D
JA
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high current, high speed switching
applications.
Marking code is L51.
60 V
60 V
200 mA
600 mA
4000 mA
1000 mA
350 mW
stg
-65 to +150
357 oC/W
o
C
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
I
R
I
R
V
F
V
F
V
F
C
T
t
rr
Q
s
V
FR
V
FR
VR=60V 100 nA
VR=60V, TA=150oC 100 µA
VR=75V 10 µA
IF=10mA 0.75 V
IF=200mA 1.00 V
IF=500mA 1.25 V
VR=0, f=1 MHz 2.5 pF
IF=IR=400mA, RL=100Ω, Rec. to 40mA
IF=10mA, VR=5.0V, RL=500Ω 50 pC
IF=400mA, tr=30ns 1.2 V
IF=400mA, tr=100ns 1.5 V
6.0 ns
60
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All dimensions in inches (mm).
LEAD CODE:
1) ANODE 1
2) ANODE 2
3) CATHODE 2
4) CATHODE 1
R2
61