CENTR CZTA28 Datasheet

MAXIMUM RATINGS: (TA=25°C)

SYMBOL UNITS

Collector-Emitter Voltage V

CES

80 V

Collector-Base Voltage V

CBO

80 V

Emitter-Base Voltage V

EBO

12 V

Collector Current I

C

500 mA

Power Dissipation P

D

2.0 W

Operating and Storage

Junction Temperature TJ,T

stg

-65 to +150 °C

Thermal Resistance Θ

JA

62.5 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

I

CBO

VCB=60V 100 nA

I

CES

VCE=60V 500 nA

I

EBO

VEB=10V 100 nA

BV

CBO

I

C

=100µA80V

BV

CES

I

C

=100µA80V

BV

EBO

I

E

=10µA12V

V

CE(SAT)

IC=10mA, IB=10µA 1.2 V

V

CE(SAT)

IC=100mA, IB=100µA 1.5 V

V

BE(ON)

VCE=5.0V, IC=100mA 2.0 V

h

FE

VCE=5.0V, IC=10mA 10,000

h

FE

VCE=5.0V, IC=100mA 10,000

f

T

VCE=5.0V, IC=10mA, f=100MHz 125 MHz

C

ob

VCB=10V, IE=0, f=100kHz 8.0 pF

CZTA28

SURFACE MOUNT

NPN DARLINGTON TRANSISTOR

SOT-223 CASE

Central

Semiconductor Corp.

TM

R0 ( 13-November 2001)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZTA28
type is a NPN Silicon Darlington Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high gain.

Central

Semiconductor Corp.

TM

SOT-223 CASE - MECHANICAL OUTLINE

CZTA28

SURFACE MOUNT

NPN DARLINGTON TRANSISTOR

R0 ( 13-November 2001)

Lead Code:

1) BASE

2) COLLECTOR

3) EMITTER

4) COLLECTOR