CENTR CZT5551 Datasheet
CZT5551
NPN SILICON TRANSISTOR
SOT-223 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
voltage amplifier applications.
180 V
160 V
6.0 V
600 mA
2.0 W
-65 to +150
62.5 oC/W
o
C
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
VCB=120V 50 nA
VCB=120V, TA=100oC 50 µA
VEB=4.0V 50 nA
IC=100µA 180 V
IC=1.0mA 160 V
IE=10µA 6.0 V
IC=10mA, IB=1.0mA 0.15 V
IC=50mA, IB=5.0mA 0.20 V
IC=10mA, IB=1.0mA 1.00 V
IC=50mA, IB=5.0mA 1.00 V
VCE=5.0V, IC=1.0mA 80
VCE=5.0V, IC=10mA 80 250
VCE=5.0V, IC=50mA 30
316
SYMBOL TEST CONDITIONS MIN MAX UNITS
f
T
C
ob
C
ib
h
fe
NF VCE=5.0V, IC=200µA, RS=10Ω
All dimensions in inches (mm).
VCE=10V, IC=10mA, f=100MHz 100 300 MHz
VCB=10V, IE=0, f=1.0MHz 6.0 pF
VEB=0.5V, IC=0, f=1.0MHz 20 pF
VCE=10V, IC=1.0mA, f=1.0kHz 50 200
f=10Hz to 15.7kHz 8.0 dB
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
3) COLLECTOR
317
R2
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