CENTR CZT5338 Datasheet
CZT5338
NPN SILICON
POWER TRANSISTOR
TM
POWER
223
SOT-223 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Base Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
B
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5338
type is an NPN silicon power transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high current amplification and switching
capability.
100 V
100 V
6.0 V
5.0 A
1.0 A
2.0 W
-65 to +150 oC
62.5 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
EBO
I
CEO
BV
CEO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
VCB=100V 10 µA
VBE=6.0V 100 µA
VCE=90V 100 µA
IC=50mA 100 V
IC=2.0A, IB=200mA 0.7 V
IC=5.0A, IB=500mA 1.2 V
IC=2.0A, IB=200mA 1.2 V
IC=5.0A, IB=500mA 1.8 V
VCE=2.0V, IC=500mA 30
VCE=2.0V, IC=2.0A 30 120
VCE=2.0V, IC=5.0A 20
312
SYMBOL TEST CONDITIONS MIN MAX UNITS
f
C
C
t
t
t
t
T
ob
ib
d
r
s
f
All dimensions in inches (mm).
VCE=10V, IC=500mA, f=10MHz 30 MHz
VCB=10V, IE=0, f=1.0MHz 250 pF
VBE=2.0V, IC=0, f=1.0MHz 1000 pF
VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA 100 ns
VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA 100 ns
VCC=40V, IC=2.0A, IB1=IB2=200mA 2.0 µs
VCC=40V, IC=2.0A, IB1=IB2=200mA 200 ns
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
313
R2
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