CENTR CZT32C, CZT31C Datasheet
NEW
CZT31C NPN
CZT32C PNP
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
TM
TM
POWER
223
SOT-223 CASE
MAXIMUM RATINGS: (TA=25oC)
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Peak Collector Current I
Base Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted)
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 3.0 amps.
SYMBOL UNITS
CBO
CEO
EBO
C
CM
B
D
stg
JA
-65 to +150
100 V
100 V
5.0
3.0 A
6.0 A
1.0 A
2.0 W
62.5
o
C
o
C/W
V
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
I
CEO
I
EBO
BV
CEO
* V
CE(SAT)
* V
BE(ON)
* h
FE
* h
FE
f
T
* Pulsed, 2%D.C.
VCE=100V 200 µA
VCE=60V 300 µA
VEB=5.0V 1.0 mA
IC=30mA 100 V
IC=3.0A, IB=375mA 1.2 V
VCE=4.0V, IC=3.0A 1.8 V
VCE=4.0V, IC=1.0A 25
VCE=4.0V, IC=3.0A 10 100
VCE=10V, IC=500mA, f=1.0MHz 3.0 MHz
294
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R2
R1
295
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