CENTR CZT3019 Datasheet
CZT3019
NPN SILICON TRANSISTOR
SOT-223 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Collector Current (Peak) I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
CM
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3019
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
current general purpose amplifier applications.
120 V
80 V
7.0 V
1.0 A
1.5 A
2.0 W
-65 to +150 oC
62.5 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
h
FE
h
FE
VCB=90V 10 nA
VEB=5.0V 10 nA
IC=100µA 120 V
IC=30mA 80 V
IE=100µA 7.0 V
IC=150mA, IB=15mA 0.2 V
IC=500mA, IB=50mA 0.5 V
IC=150mA, IB=15mA 1.1 V
VCE=10V, IC=0.1mA 50
VCE=10V, IC=10mA 90
VCE=10V, IC=150mA 100 300
VCE=10V, IC=500mA 50
VCE=10V, IC=1.0A 15
306
SYMBOL TEST CONDITIONS MIN MAX UNITS
f
T
C
ob
C
ib
NF VCE=10V, IC=100µA, RS=1kΩ, f=1.0kHz 4.0 dB
All dimensions in inches (mm).
VCE=10V, IC=50mA, f=1.0MHz 100 MHz
VCB=10V, IE=0, f=1.0MHz 12 pF
VEB=0.5V, IC=0, f=1.0MHz 60 pF
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
307
R2
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