CENTR CZT2000 Datasheet
TM
CZT2000
NPN SILICON
EXTREMELY HIGH VOLTAGE
DARLINGTON TRANSISTOR
SOT-223 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CES
EBO
C
D
JA
stg
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2000
type is an NPN Epitaxial Planar Silicon
Darlington Transistor manufactured in an
epoxy molded surface mount package,
designed for applications requiring extremely
high voltages and high gain capability.
200 V
200 V
10 V
600 mA
2.0 W
-65 to +150 oC
62.5 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
EBO
BV
CES
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(ON)
h
FE
h
FE
h
FE
VCB=180V 500 nA
VBE=10V 100 nA
IC=1.0mA 200 V
IC=20mA, IB=25µA 0.9 V
IC=80mA, IB=40µA 1.1 V
IC=160mA, IB=100µA 1.2 V
VCE=5.0V, IC=160mA 2.0 V
VCE=5.0V, IC=100µA 3,000
VCE=5.0V, IC=10mA 3,000
VCE=5.0V, IC=160mA 3,000
298
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
299
R2
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