CENTR CXTA92, CXTA42 Datasheet
MAXIMUM RATINGS (TA=25oC)
SYMBOL CXT
A42 CXTA92 UNITS
Collector-Base Voltage V
CBO
300 300 V
Collector-Emitter Voltage V
CEO
300 300 V
Emitter-Base Voltage V
EBO
6.0 5.0 V
Collector Current I
C
500 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150
o
C
Thermal Resistance Θ
JA
104
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
CXTA42 CXTA92
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CBO
VCB=200V 100 250 nA
IEBOV
BE
=6.0V 100 - nA
I
EBO
VBE=3.0V - 100 nA
BV
CBO
IC=100mA 300 300 V
BV
CEO
IC=1.0mA 300 300 V
BV
EBO
I
E
=100µA 6.0 5.0 V
V
CE(SAT)
IC=20mA, IB=2.0mA 0.5 0.5 V
V
BE(SAT)
IC=20mA, IB=2.0mA 0.9 0.9 V
h
FE
VCE=10V, IC=1.0mA 25 25
h
FE
VCE=10V, IC=10mA 40 40
h
FE
VCE=10V, IC=30mA 40 25
f
T
VCE=20V, IC=10mA, f=100MHz 50 50 MHz
C
ob
VCB=20V, IE=0, f=1.0MHz 3.0 6.0 pF
CXTA42 NPN
CXTA92 PNP
SURFACE MOUNT
SILICON HIGH VOLTAGE
TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3( 19-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXTA42,
CXTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXTA42 NPN
CXTA92 PNP
SURFACE MOUNT
SILICON HIGH VOLTAGE
TRANSISTOR
R3( 19-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
BOTTOM VIEW
B
A
E
C
F
H
1
J
G
2
K
L
M
3
R3
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