CENTR CXT5551 Datasheet
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
180 V
Collector-Emitter Voltage V
CEO
160 V
Emitter-Base Voltage V
EBO 6.0 V
Collector Current I
C
600
mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=120V 50 nA
I
CBO
VCB=120V, T
A
=100°C 50 µA
I
EBO
VEB=4.0V 50 nA
BV
CBO
IC=100µA 180 V
BV
CEO
IC=1.0mA 160 V
BV
EBO
IE=10µA 6.0 V
V
CE(SAT)
IC=10mA, IB=1.0mA 0.15 V
V
CE(SAT)
IC=50mA, IB=5.0mA 0.20 V
V
BE(SAT)
IC=10mA, IB=1.0mA 1.00 V
V
BE(SAT)
IC=50mA, IB=5.0mA 1.00 V
h
FE
VCE=5.0V, IC=1.0mA 80
h
FE
VCE=5.0V, IC=10mA 80 250
h
FE
VCE=5.0V, IC=50mA 30
f
T
VCE=10V, IC=10mA, f=100MHz 100 300 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz 6.0 pF
h
fe
VCE=10V, IC=1.0mA, f=1.0kHz 50 200
NF VCE=5.0V, IC=200µA, R
S
=10Ω
f=10Hz to 15.7kHz 8.0 dB
CXT5551
SURFACE MOUNT
NPN SILICON TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 ( 20-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
voltage amplifier applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT5551
SURFACE MOUNT
NPN SILICON TRANSISTORS
R3 ( 20-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
BOTTOM VIEW
B
A
E
F
G
H
C
J
1
L
2
K
M
3
R3
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