CENTR CXT4033 Datasheet
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Collector Current (Peak) I
CM
1.5 A
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=60V 50 nA
I
EBO
VEB=5.0V 10 nA
BV
CBO
I
C
=10µA80 V
BV
CEO
IC=10mA 80 V
BV
EBO
I
E
=10µA 5.0 V
V
CE(SAT)
IC=150mA, IB=15mA 0.15 V
V
CE(SAT)
IC=500mA, IB=50mA 0.50 V
V
BE(SAT)
IC=150mA, IB=15mA 0.90 V
V
BE(SAT)
IC=500mA, IB=50mA 1.10 V
h
FE
VCE=5.0V, IC=0.1mA 75
h
FE
VCE=5.0V, IC=100mA 100 300
h
FE
VCE=5.0V, IC=500mA 70
h
FE
VCE=5.0V, IC=1.0A 25
f
T
VCE=10V, IC=50mA, f=1.0MHz 100 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz 20 pF
C
ib
VEB=0.5V, IC=0, f=1.0MHz 110 pF
CXT4033
SURFACE MOUNT
PNP SILICON TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 ( 20-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT4033
type is an PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high current
general purpose amplifier applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT4033
SURFACE MOUNT
PNP SILICON TRANSISTORS
R3 ( 20-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
BOTTOM VIEW
B
A
E
F
G
H
C
J
1
L
2
K
M
3
R3
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