CENTR CXT3019 Datasheet
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
140 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
7.0 V
Collector Current I
C
1.0 A
Collector Current (Peak) I
CM
1.5 A
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=90V 10 nA
I
EBO
VEB=5.0V 10 nA
BV
CBO
I
C
=100µA 140 V
BV
CEO
IC=30mA 80 V
BV
EBO
I
E
=100µA 7.0 V
V
CE(SAT)
IC=150mA, IB=15mA 0.2 V
V
CE(SAT)
IC=500mA, IB=50mA 0.5 V
V
BE(SAT)
IC=150mA, IB=15mA 1.1 V
h
FE
VCE=10V, IC=0.1mA 50
h
FE
VCE=10V, IC=10mA 90
h
FE
VCE=10V, IC=150mA 100 300
h
FE
VCE=10V, IC=500mA 50
h
FE
VCE=10V, IC=1.0A 15
CXT3019
SURFACE MOUNT
NPN SILICON TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 ( 20-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3019
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high current
general purpose amplifier applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT3019
SURFACE MOUNT
NPN SILICON TRANSISTORS
R3 ( 20-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL TEST CONDITIONS MIN MAX UNITS
f
T
VCE=10V, IC=50mA, f=1.0MHz 100 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz 12 pF
C
ib
VEB=0.5V, IC=0, f=1.0MHz 60 pF
NF VCE=10V, I
C
=100µA, RS=1kΩ, f=1.0kHz 4.0 dB
BOTTOM VIEW
B
A
E
F
H
C
1
J
2
L
M
3
K
G
R3
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