CENTR CXT2907A Datasheet
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
600 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=50V 10 nA
I
CBO
VCB=50V, T
A
=125°C 10 µA
I
CEV
VCE=30V, VBE=0.5V 50 nA
BV
CBO
IC=10mA 60 V
BV
CEO
IC=10mA 60 V
BV
EBO
IE=10mA 5.0 V
V
CE(SAT)
IC=150mA, IB=15mA 0.4 V
V
CE(SAT)
IC=500mA, IB=50mA 1.6 V
V
BE(SAT)
IC=150mA, IB=15mA 1.3 V
V
BE(SAT)
IC=500mA, IB=50mA 2.6 V
h
FE
VCE=10V, IC=0.1mA 75
h
FE
VCE=10V, IC=1.0mA 100
h
FE
VCE=10V, IC=10mA 100
h
FE
VCE=10V, IC=150mA 100 300
CXT2907A
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 ( 19-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT2907A
type is an PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose and switching applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT2907A
SURFACE MOUNT
PNP SILICON TRANSISTOR
R3 ( 19-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL TEST CONDITIONS MIN MAX UNITS
h
FE
VCE=10V, IC=500mA 50
f
T
VCE=20V, IC=50mA, f=100MHz 200 MHz
Cob
VCB=10V, IE=0, f=1.0MHz 8.0 pF
C
ib
VBE=2.0V, IC=0, f=1.0MHz 30 pF
t
on
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 45 ns
t
d
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 ns
t
r
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 40 ns
t
off
VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns
t
s
VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns
t
f
VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns
BOTTOM VIEW
A
B
E
F
G
H
C
1
J
2
L
M
3
K
R3
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