CENTR CXT2222A Datasheet

MAXIMUM RATINGS (TA=25°C)

SYMBOL UNITS

Collector-Base Voltage V

CBO

75 V

Collector-Emitter Voltage V

CEO

40 V

Emitter-Base Voltage V

EBO

6.0 V

Collector Current I

C

600 mA

Power Dissipation P

D

1.2 W
Operating and Storage
Junction Temperature TJ,T

stg

-65 to +150 °C

Thermal Resistance Θ

JA

104 °C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

I

CBO

VCB=60V 10 nA

I

CBO

VCB=60V, T

A

=125°C 10 µA

I

EBO

VEB=3.0V 10 nA

I

CEV

VCE=60V, VEB=3.0V 10 nA

BV

CBO

I

C

=10µA75V

BV

CEO

IC=10mA 40 V

BV

EBO

I

E

=10µA 6.0 V

V

CE(SAT)

IC=150mA, IB=15mA 0.3 V

V

CE(SAT)

IC=500mA, IB=50mA 1.0 V

V

BE(SAT)

IC=150mA, IB=15mA 0.6 1.2 V

V

BE(SAT)

IC=500mA, IB=50mA 2.0 V

h

FE

VCE=10V, IC=0.1mA 35

h

FE

VCE=10V, IC=1.0mA 50

h

FE

VCE=10V, IC=10mA 75

h

FE

VCE=10V, IC=150mA 100 300

h

FE

VCE=1.0V, IC=150mA 50

h

FE

VCE=10V, IC=500mA 40

f

T

VCE=20V, IC=20mA, f=100MHz 300 MHz

C

ob

VCB=10V, IE=0, f=1.0MHz 8.0 pF

C

ib

VEB=0.5V, IC=0, f=1.0MHz 25 pF

CXT2222A

SURFACE MOUNT

NPN SILICON TRANSISTOR

SOT-89 CASE

Central

Semiconductor Corp.

TM

R3 ( 19-December 2001)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT2222A
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose and switching applications.

Central

Semiconductor Corp.

TM

SOT-89 CASE - MECHANICAL OUTLINE

CXT2222A

SURFACE MOUNT

NPN SILICON TRANSISTOR

R3 ( 19-December 2001)

LEAD CODE:

1) EMITTER

2) COLLECTOR

3) BASE

ELECTRICAL CHARACTERISTICS (Continued)

SYMBOL TEST CONDITIONS MIN MAX UNITS

h

ie

VCE=10V, I

C

=1.0mA, f=1.0kHz 2.0 8.0 kΩ

h

ie

VCE=10V, I

C

=10mA, f=1.0kHz 0.25 1.25 kΩ

h

re

VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10

-4

h

re

VCE=10V, IC=10mA, f=1.0kHz 4.0 x10

-4

h

fe

VCE=10V, IC=1.0mA, f=1.0kHz 50 300

h

fe

VCE=10V, IC=10mA, f=1.0kHz 75 375

h

oe

VCE=10V, I

C

=1.0mA, f=1.0kHz 5.0 35 µmhos

h

oe

VCE=10V, I

C

=10mA, f=1.0kHz 25 200 µmhos

rb’C

c

VCB=10V, IE=20mA, f=31.8MHz 150 ps

NF VCE=10V, I

C

=100µA, RS=1.0kΩ, f=1.0kHz 4.0 dB

t

d

VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 ns

t

r

VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 25 ns

t

s

VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns

t

f

VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns

BOTTOM VIEW

A

B

E

F

G

C

H

1

J

2

L

M

3

K

R3