CENTR CS220-12P, CS220-12N, CS220-12M, CS220-12D, CS220-12B Datasheet
CS220-12B
CS220-12D
CS220-12M
CS220-12N
CS220-12P
SILICON CONTROLLED RECTIFIER
12 AMP, 200 THRU 1000 VOLTS
JEDEC TO-220AB CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS220-12B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit
applications and control systems.
MAXIMUM RATINGS (TC = 25
o
C unless otherwise noted)
CS220 CS220 CS220 CS220 CS220 UNITS
SYMBOL
-12B -12D -12M
-12N -12P
Peak Repetitive Off-State Voltage V
DRM
, V
RRM
200 400 600 800 1000 V
RMS On-State Current (TC= 90
o
C) I
T(RMS)
12 A
Peak One Cycle Surge (t = 10ms) I
TSM
120 A
I2t Value for Fusing (t = 10ms) I2t72A
2
s
Peak Gate Power (tp = 10µs) P
GM
40 W
Average Gate Power Dissipation P
G(AV)
1.0 W
Peak Forward Gate Current (tp = 10µs) I
FGM
4.0 A
Peak Forward Gate Voltage (tp =10µs) V
FGM
16 V
Peak Reverse Gate Voltage (tp =10µs) V
RGM
5.0 V
Critical Rate of Rise of On-State Current di/dt 100 A/µs
Storage Temperature T
stg
-40 to +150
o
C
Junction Temperature T
J
-40 to +125
o
C
Thermal Resistance Θ
J-A
60
o
C/W
Thermal Resistance Θ
J-C
2.5
o
C/W
ELECTRICAL CHARACTERISTICS (TC = 25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS MIN TYP MAX UNITS
I
DRM
, I
RRM
Rated V
DRM
, V
RRM
0.01 mA
I
DRM
, I
RRM
Rated V
DRM
, V
RRM
, TC= 125
o
C 3.00 mA
I
GT
VD= 12V, R
L
= 33Ω 15 mA
I
H
IT= 100mA 30 mA
V
GT
VD= 12V, R
L
= 33Ω 1.50 V
V
TM
ITM= 24A, tp = 10ms 1.60 V
dv/dt VD= .67 x V
DRM
, TC= 125
o
C 200 V/µs
R2 ( 30-November 2001)
145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 • Fax: (631) 435-1824
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