CENTR CQ89D, CQ89N, CQ89M Datasheet

TM

3

CQ89D

CQ89M

CQ89N

2.0 AMP TRIAC

400 THRU 800 VOLTS

SOT-89

SOT-89 CASE

MAXIMUM RATINGS (TC=25oC)

SYMBOL CQ89D CQ89M CQ89N UNITS

Peak Repetitive Off-State Voltage V
RMS On-State Current (TC=80oC) I
Peak One Cycle Surge (10ms) I
Peak Gate Current I
Average Gate Power Dissipation P
StorageTemperature T
Junction Temperature T
Thermal Resistance Θ

DRM

T(RMS)
TSM
GM

G(AV)
stg
J

J-C

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQ89D
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.

400 600 800 V

2.0 A
10 A

1.0 A

0.1 W

-45 to +150 oC

-45 to +125 oC
10 oC/W

ELECTRICAL CHARACTERISTICS (TC=25oC unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

I

DRM

I

DRM

I

GT

I

H

V

GT

V

TM

dv/dt VD=

VD=Rated V
VD=Rated V
VD=12V, QUAD I, II, III, IV 25 mA
VD=12V 25 mA
VD=12V 2.00 V
IT=3.0A 1.75 V

2

DRM

, TC=125oC 200 µA

DRM

V

, TC=125oC 100 V/µs

DRM

5.00 µA

252

All dimensions in inches (mm).

LEAD CODE:

1) GATE

2) MT2

3) MT1

253

R2