CENTR CMXSH-3 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMXSH-3 type contains three (3) Isolated
Schottky Silicon Switching Diodes, manufactured by the epitaxial planar process,
epoxy molded in a super-mini surface
mount package, designed for applications
requiring low forward voltage drop.
Marking code is XH3.
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
30 V
Continuous Forward Current I
F
100 mA
Peak Repetitive Forward Current I
FRM
350 mA
Forward Surge Current, tp=10 ms I
FSM
750 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
R
VR=25V 90 500 nA
I
R
VR=25V, TA=100°C 25 100 µA
B
VR
IR=100µA 30 V
V
F
IF=2.0mA 0.29 0.33 V
V
F
IF=15mA 0.40 0.45 V
V
F
IF=100mA 0.74 1.00 V
C
T
VR=1.0V, f=1.0MHz 7.0 pF
t
rr
IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns
CMXSH-3
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
SCHOTTKY
SWITCHING DIODE
SOT-26 CASE
Central
Semiconductor Corp.
TM
R1 ( 14-Sept 2000)
Lead Code
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-26 CASE
CMXSH-3
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
SCHOTTKY
SWITCHING DIODE
All Dimensions in Inches (mm)
Pin Configuration
R1 ( 14-Sept 2000)
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