CENTR CMXD6001 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD6001
type contains three (3) Isolated Silicon Switching
Diodes, manufactured by the epitaxial planar
process, epoxy molded in a SUPERmini
™
surface
mount package, designed for switching
applications requiring extremely low leakage.
Marking code is X01.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
75 V
Peak Repetitive Reverse Voltage V
RRM
100 V
Continuous Forward Current I
F
250 mA
Peak Repetitive Forward Current I
FRM
250 mA
Forward Surge Current, tp=1 µsec. I
FSM
4000 mA
Forward Surge Current, tp=1 sec. I
FSM
1000 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
VR=75V 500 pA
BV
R
IR=100µA 100 V
V
F
IF=1.0mA 0.85 V
V
F
IF=10mA 0.95 V
V
F
IF=100mA 1.1 V
C
T
VR=0, f=1 MHz 2.0 pF
t
rr
IR=IF=10mA, R
L
=100Ω Rec. to 1.0mA 3.0 µs
CMXD6001
SUPERmini
™
TRIPLE ISOLATED
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
SOT-26 CASE
Central
Semiconductor Corp.
TM
R0 ( 11-September 2001)
LEAD CODE:
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
Central
Semiconductor Corp.
TM
SOT-26 CASE - MECHANICAL OUTLINE
CMXD6001
SUPERmini
™
TRIPLE ISOLATED
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
R0 ( 11-September 2001)
MARKING CODE: X01
G
H
C
TOP VIEW
A
B
I
J
D
K
6
4
5
E
3
1
2
F
R1
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