CENTR CMXD4448 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMXD4448 type contains three (3) Isolated
High Speed Silicon Switching Diodes,
manufactured by the epitaxial planar
process, epoxy molded in a super-mini
surface mount package, designed for
applications requiring high speed switching
applications. Marking code is X48.
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
75 V
Peak Repetitive Reverse Voltage V
RRM
100 V
Continuous Forward Current I
F
250 mA
Peak Repetitive Forward Current I
FRM
250 mA
Forward Surge Current, tp=1 µsec. I
FSM
4000 mA
Forward Surge Current, tp=1 sec. I
FSM
1000 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
VR=20V 25 nA
BV
R
IR=5.0µA 75 V
BV
R
IR=100µA 100 V
V
F
IF=100mA 1.0 V
C
T
VR=0, f=1 MHz 4.0 pF
t
rr
IR=IF=10mA, RL=100Ω Rec. to 1.0mA 4.0 ns
CMXD4448
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH SPEED
SWITCHING DIODE
SOT-26 CASE
Central
Semiconductor Corp.
TM
R1 ( 14-Sept 2000)
Lead Code
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-26 CASE
CMXD4448
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH SPEED
SWITCHING DIODE
All Dimensions in Inches (mm)
Pin Configuration
R1 ( 14-Sept 2000)
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