CENTR CMXD2004TO Datasheet
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Continuous Reverse Voltage V
R
240 V
Peak Repetitive Reverse Voltage V
RRM
300 V
Peak Repetitive Reverse Current I
O
200 mA
Continuous Forward Current I
F
225 mA
Peak Repetitive Forward Current I
FRM
625 mA
Forward Surge Current, tp=1 µsI
FSM
4000 mA
Forward Surge Current, tp=1 s I
FSM
1000 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
VR=240V 100 nA
I
R
VR=240V, T
A
=150°C 100 µA
BV
R
I
R
=100µA 300 V
V
F
IF=100mA 1.0 V
C
T
VR=0, f=1 MHz 5.0 pF
t
rr
IF=IR=30mA, Rec. To 3.0mA, R
L
=100Ω 50 ns
CMXD2004TO
SUPERmini
TM
TRIPLE ISOLATED OPPOSING
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
SOT 26 CASE
Central
Semiconductor Corp.
TM
R0 ( 29-November 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMXD2004TO consists of three (3) Isolated
High Voltage Silicon Switching Diodes arranged
in an alternating configuration in a SUPERmini
SOT-26 surface mount package, designed for
high voltage switching applications. This device
can be configured as a 900V switching diode.
See optional mounting pad configuration.
Marking code is X04TO.
Central
Semiconductor Corp.
TM
SOT 26 CASE - MECHANICAL OUTLINE
CMXD2004TO
SUPERmini
TM
TRIPLE ISOLATED OPPOSING
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
R0 ( 29-November 2001)
LEAD CODE:
1) Anode D1
2) Cathode D2
3) Anode D3
4) Cathode D3
5) Anode D2
6) Cathode D1
Opitional Mounting Pad Layout
For 900V Series Configuration
Loading...