CENTR CMXD2004 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMXD2004 type contains three (3) Isolated
High Voltage Silicon Switching Diodes,
manufactured by the epitaxial planar
process, epoxy molded in a super-mini
surface mount package, designed for
applications requiring high voltage
capability. Marking code is X04.
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
240 V
Peak Repetitive Reverse Voltage V
RRM
300 V
Peak Repetitive Reverse Current I
O
200 mA
Continuous Forward Current I
F
225 mA
Peak Repetitive Forward Current I
FRM
625 mA
Forward Surge Current, tp=1 ms I
FSM
4000 mA
Forward Surge Current, tp=1 s I
FSM
1000 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNIT
I
R
VR=240V 100 nA
I
R
VR=240V, TA=150°C 100 µA
BV
R
IR=100µA 300 V
V
F
IF=100mA 1.0 V
C
T
VR=0, f=1 MHz 5.0 pF
t
rr
IF=IR=30mA, Rec. To 3.0mA, RL=100Ω 50 ns
CMXD2004
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH VOLTAGE
SWITCHING DIODE
SOT-26 CASE
Central
Semiconductor Corp.
TM
R1 ( 14-Sept 2000)
Lead Code
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-26 CASE
CMXD2004
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH VOLTAGE
SWITCHING DIODE
All Dimensions in Inches (mm)
Pin Configuration
R1 ( 14-Sept 2000)
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