CENTR CMWSH-4 Datasheet

DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, Dual, Galvanically isolated Silicon Schottky diode , is designed for use in high speed surface mount switching applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
40 V
Continuous Forward Current I
F
100 mA
Peak Repetitive Forward Current I
FRM
350 mA
Forward Surge Current, tp=10 ms I
FSM
750 mA
Power Dissipation P
D
350 mW
Operating and Storage Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
R
VR=25V 90 500 nA
I
R
VR=25V, TA=100°C 25 100 µA
I
R
VR=40V 0.23 5.0 µA
V
F
IF=2.0mA 0.29 0.33 V
V
F
IF=15mA 0.40 0.45 V
V
F
IF=100mA 0.52 0.60 V
C
T
VR=1.0V, f=1.0MHz 10.0 pF
t
rr
IF=IR=10mA, Irr=1.0mA, R
L
=100 5.0 ns
CMWSH-4
SURFACE MOUNT
SCHOTTKY DIODE
SOT-343 CASE
Central
Semiconductor Corp.
TM
R0 ( 27-August 2001)
LEAD CODE:
1) CATHODE D1
2) ANODE D1
3) ANODE D2
4) CATHODED2
Central
Semiconductor Corp.
TM
SOT-343 CASE - MECHANICAL OUTLINE
CMWSH-4
SURFACE MOUNT
SCHOTTKY DIODE
R0 ( 27-August 2001)
MARKING CODE: WSH4
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