
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5179
type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in an ULTRAmini™ surface mount
package, designed for low noise, high frequency
amplifier and high output oscillator applications.
Marking code is HC7.
CMUT5179
ULTRAmini™
SURFACE MOUNT
NPN SILICON
RF TRANSISTOR
SOT-523 CASE
Central
Semiconductor Corp.
TM
R0 ( 15-August 2001)
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
2.5 V
Collector Current I
C
50 mA
Power Dissipation P
D
250 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
VCB=15V 20 nA
BV
CBO
IC=10µA 20 V
BV
CEO
IC=3.0mA 15 V
BV
EBO
IE=10µA 2.5 V
V
CE(SAT)
IC=10mA, IB=1.0mA 0.4 V
V
BE(SAT)
IC=10mA, IB=1.0mA 1.0 V
h
FE
VCE=1.0V, IC=3.0mA 25
f
T
VCE=6.0V, IC=5.0mA, f=100MHz 900 1450 MHz
C
cb
VCB=10V, IE=0, f=0.1 to 1.0MHz 1.0 pF
h
fe
VCE=6.0V, IC=2.0, f=1.0kHz 25
G
pe
VCE=6.0V, IC=5.0mA, f=200MHz 15 dB
NF VCE=6.0V, IC=1.5mA, R
S
=50Ω, f=200MHz 4.5 dB

LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
Central
Semiconductor Corp.
TM
SOT-523 CASE - MECHANICAL OUTLINE
CMUT5179
ULTRAmini™
SURFACE MOUNT
NPN SILICON
RF TRANSISTOR
BOTTOM VIEW
R0 ( 15-August 2001)
MARKING CODE: HC7
B
A
C
D
E
F
12
G
H
3
I
R1