CENTR CMSD2004S Datasheet

TM

NEW

SUPER

SUPER

CMSD2004S

HIGH VOLTAGE

SWITCHING DIODE

TM

mini

SOT-323 CASE

The following configurations are available:
CMSD2004S DUAL, IN SERIES MARKING CODE: B6D
MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS

Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Peak Repetitive Reverse Current I
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 ms I
Forward Surge Current, tp=1 s I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Q

Semiconductor Corp.

DESCRIPTION

The CENTRAL SEMICONDUCTOR CMSD2004S
type is a silicon switching diode manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.

R

RRM
O
F

FRM
FSM
FSM

250 mW

D

stg

JA

240 V
300 V
200 mA
225 mA
625 mA
4000 mA
1000 mA

-65 to +150 °C
500 °C/W

Central

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNIT

BV
I

R

I

R

I

R

I

R

V
C
t

rr

R

F
T

IR=100mA 300 V
VR=200V - nA
VR=200V, TA=150°C - mA
VR=240V 100 nA
VR=240V, TA=150°C 100 mA
IF=100mA 1.0 V
VR=0, f=1 MHz 5.0 pF
IF=IR=30mA, RECOV. TO 3.0mA,RL=100W 50 ns

280

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All dimensions in inches (mm).

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LEAD CODE

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R2

R3