CENTR CMPTH10 Datasheet

CMPTH10

NPN SILICON RF TRANSISTOR

SOT-23 CASE

MAXIMUM RATINGS (TA=25oC)

SYMBOL UNITS

Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ

CBO
CEO
EBO
D

JA

stg

TM

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR
CMPTH10 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise UHF/VHF amplifier and
high output oscillator applications.

Marking code is C3E.

30 V
25 V

3.0 V
350 mW

-65 to +150 oC
357 oC/W

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

I

CBO

I

EBO

BV

CBO

BV

CEO

BV

EBO

V

CE(SAT)

V

BE(ON)

h

FE

f

T

C

cb

C

rb

rb’C

c

VCB=25V 100 nA
VEB=2.0V 100 nA
IC=100µA 30 V
IC=1.0mA 25 V
IE=10µA 3.0 V
IC=4.0mA, IB=0.4mA 0.50 V
VCE=10V, IB=4.0mA 0.95 V
VCE=10V, IC=4.0mA 60
VCE=10V, IC=4.0mA, f=100MHz 650 MHz
VCB=10V, IE=0, f=1.0MHz 0.70 pF
VCB=10V, IE=0, f=1.0MHz 0.65 pF
VCB=10V, IC=4.0mA, f=31.8MHz 9.0 ps

208

All dimensions in inches (mm).

LEAD CODE:

1) BASE

2) EMITTER

3) COLLECTOR

R2

209