CENTR CMPTA29 Datasheet

NEW

DARLINGTON TRANSISTOR

MAXIMUM RATINGS: (TA=25oC)

Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ

CMPTA29

HIGH VOLTAGE

NPN SILICON

SOT-23 CASE

SYMBOL UNITS

CBO
CES
EBO

C

D

JA

stg

TM

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR
CMPTA29 is a Silicon NPN Darlington
Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
extremely high voltage and high gain.

Marking Code is C29.

100 V
100 V

12
500
350 mW

-65 to +150 oC
357 oC/W

V
mA

ELECTRICAL CHARACTERISTICS: (TA=25oC)

SYMBOL TEST CONDITIONS MIN MAX UNITS

I

CES

I

CBO

I

EBO

BV

CES

BV

CBO

BV

EBO

V

CE(SAT)

V

CE(SAT)

V

BE(ON)

VCE=80V 500 nA
VCB=80V 100 nA
VBE=10V 100 nA
IC=100µA 100 V
IC=100µA 100 V
IE=10µA 12 V
IC=10mA, IB=10µA 1.2 V
IC=100mA, IB=100mA 1.5 V
VCE=5.0V, IC=100mA 2.0 V

202

SYMBOL TEST CONDITIONS MIN MAX UNITS

h
h
f
C

FE

FE

T

ob

VCE=5.0V, IC=10mA 10,000
VCE=5.0V, IC=100mA 10,000
VCE=5.0V, IC=10mA, f=100MHz 125 MHz
VCB=10V, IE=0, f=1.0MHz 8.0 pF

All dimensions in inches (mm).

LEAD CODE:

1) BASE

2) EMITTER

3) COLLECTOR

203

R2

R1