CENTR CMPT930 Datasheet
CMPT930
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CBO
CEO
EBO
C
D
stg
JA
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPT930 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
amplifier applications.
Marking Code is C1X.
-65 to +150
45 V
45 V
5.0 V
30 mA
350 mW
o
C
357
o
C/W
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
CEO
I
CES
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
f
T
C
ob
NF VCE=5.0V, IC=10mA, RS=10kΩ,
VCB=45V 10 nA
VCE=5.0V 10 nA
VCE=45V 10 nA
VEB=5.0V 10 nA
IC=10µA 45 V
IC=10mA 45 V
IE=10µA 5.0 V
IC=10mA, IB=0.5mA 1.0 V
IC=10mA, IB=0.5mA 0.6 1.0 V
VCE=5.0V, IC=10µA 100 300
VCE=5.0V, IC=500µA 150
VCE=5.0V, IC=10mA 600
VCE=5.0V, IC=500mA, f=30MHz 30 MHz
VCB=5.0V, IE=0, f=1.0MHz 8.0 pF
f=10Hz to 15.7kHz 3.0 dB
156
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
157
R2
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