CENTR CMPT918 Datasheet
CMPT918
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
NPN SILICON RF TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT918 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high frequency (VHF/UHF)
amplifier and oscillator applications.
Marking code is C3B.
30 V
15 V
3.0 V
50 mA
350 mW
-65 to +150 oC
357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
f
T
C
ob
C
ob
C
ib
P
out
G
pe
NF VCE=6.0V, IC=1.0mA, RS=50Ω, f=60MHz 6.0 dB
VCB=15V 10 nA
IC=1.0µA 30 V
IC=3.0mA 15 V
IE=10µA 3.0 V
IC=10mA, IB=1.0mA 0.4 V
IC=10mA, IB=1.0mA 1.0 V
VCE=1.0V, IC=3.0mA 20
VCE=10V, IC=4.0mA, f=100MHz 600 MHz
VCB=0V, IE=0, f=1.0MHz 3.0 pF
VCB=10V, IE=0, f=1.0MHz 1.7 pF
VEB=0.5V, IC=0, f=1.0MHz 2.0 pF
VCB=15V, IC=8.0mA, f=500MHz 30 mW
VCB=12V, IC=6.0mA, f=200MHz 11 dB
154
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
155
R2
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