CENTR CMPT5179 Datasheet

CMPT5179

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

TM

NPN SILICON RF TRANSISTOR

SOT-23 CASE

MAXIMUM RATINGS (TA=25oC)

SYMBOL UNITS

Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ

CBO
CEO
EBO

C

D

JA

stg

DESCRIPTION:

The CENTRAL SEMICONDUCTOR
CMPT5179 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise, high frequency
amplifier and high output oscillator
applications.

Marking code is C7H.

20 V
12 V

2.5 V
50 mA
350 mW

-65 to +150 oC
357 oC/W

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

I

CBO

BV

CBO

BV

CEO

BV

EBO

V

CE(SAT)

V

BE(SAT)

h

FE

f

T

C

cb

h

fe

G

pe

NF VCE=6.0V, IC=1.5mA, RS=50Ω, f=200MHz 4.5 dB

VCB=15V 20 nA
IC=10µA 20 V
IC=3.0mA 12 V
IE=10µA 2.5 V
IC=10mA, IB=1.0mA 0.4 V
IC=10mA, IB=1.0mA 1.0 V
VCE=1.0V, IC=3.0mA 25
VCE=6.0V, IC=5.0mA, f=100MHz 900 1450 MHz
VCB=10V, IE=0, f=0.1 to 1.0MHz 1.0 pF
VCE=6.0V, IC=2.0, f=1.0kHz 25
VCE=6.0V, IC=5.0mA, f=200MHz 15 dB

182

All dimensions in inches (mm).

LEAD CODE:

1) BASE

2) EMITTER

3) COLLECTOR

R2

183