CENTR CMPT5089, CMPT5088 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5088,
CMPT5089 types are NPN silicon transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications. Marking Codes are C1Q,
C1R respectively.
MAXIMUM RATINGS: (TA=25oC)
SYMBOL CMPT5088 CMPT5089 UNITS
Collector-Base Voltage V
CBO
35 30 V
Collector-Emitter Voltage V
CEO
30 25 V
Emitter-Base Voltage V
EBO
4.5 V
Collector Current I
C
50 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150
o
C
Thermal Resistance Θ
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted)
CMPT5088 CMPT5089
SYMBOL TEST CONDITIONS MIN
MAX
MIN MAX UNITS
I
CBO
VCB=20V 50 nA
I
CBO
VCB=15V 50 nA
I
EBO
VEB=3.0V 50 nA
I
EBO
VEB=4.5V 100 nA
BV
CBO
I
C
=100µA3530V
BV
CEO
IC=1.0mA 30 25 V
BV
EBO
I
E
=100µA 4.5 4.5 V
V
CE(SAT)
IC=10mA, IB=1.0mA 0.5 0.5 V
V
BE(SAT)
IC=10mA, IB=1.0mA 0.8 0.8 V
h
FE
VCE=5.0V, IC=0.1mA 300 900 400 1200
h
FE
VCE=5.0V, IC=1.0mA 350 450
h
FE
VCE=5.0V, IC=10mA 300 400
f
T
VCE=5.0V, I
C
=500µA, f=20MHz 50 50 MHz
C
ob
VCB=5.0V, IE=0, f=1.0MHz 4.0 4.0 pF
C
ib
VBE=0.5V, IC=0, f=1.0MHz 15 15 pF
h
fe
VCE=5.0V, IC=1.0mA, f=1.0kHz 350 1400 450 1800
NF VCE=5.0V, I
C
=100µA, RS=10kΩ
f=10Hz to 15.7kHz 3.0 2.0 dB
CMPT5088
CMPT5089
SURFACE MOUNT
NPN SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 ( 2 -October 2001)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPT5088
CMPT5089
SURFACE MOUNT
NPN SILICON TRANSISTORS
R4 ( 2 -October 2001)
MARKING CODE:
CMPT5088 - C1Q
CMPT5089 - C1R
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