CENTR CMPT5087, CMPT5086 Datasheet
CMPT5086
CMPT5087
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
TM
PNP SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
D
JA
stg
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5086, CMPT5087 types are PNP silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C2P and C2Q
Respectively.
50 V
50 V
3.0 V
50 mA
350 mW
-65 to +150 oC
357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CMPT5086 CMPT5087
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I
CBO
I
CBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
f
T
C
ob
h
fe
VCB=10V 10 10 nA
VCB=35V 50 50 nA
IC=100µA 50 50 V
IC=1.0mA 50 50 V
IE=100µA 3.0 3.0 V
IC=10mA, IB=1.0mA 0.30 0.30 V
IC=10mA, IB=1.0mA 0.85 0.85 V
VCE=5.0V, IC=0.1mA 150 500 250 800
VCE=5.0V, IC=1.0mA 150 250
VCE=5.0V, IC=10mA 150 250
VCE=5.0V, IC=500µA, f=20MHz 40 40 MHz
VCB=5.0V, IE=0, f=1.0MHz 4.0 4.0 pF
VCE=5.0V, IC=1.0mA, f=1.0kHz 150 600 250 900
178
CMPT5086 CMPT5087
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
NF VCE=5.0V, IC=20mA, RS=10kΩ
f=10Hz to 15.7kHz 3.0 2.0 dB
NF VCE=5.0V, IC=100µA, RS=3.0kΩ, 3.0 2.0 dB
f=1.0kHz
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
179
R2
Loading...