CENTR CMPT3649 Datasheet
Central
Semiconductor Corp.
TM
170
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
CBO
40 V
Collector-Emitter Voltage V
CES
40 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
200 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 oC
Thermal Resistance Q
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CES
VCE=20V 0.5 mA
I
CES
VCE=20V, TA=65oC 3.0 mA
BV
CBO
IC=100mA 40 V
BV
CES
IC=10mA 40V
BV
CEO
IC=10mA 15 V
BV
EBO
IE=100mA 5.0 V
V
CE(SAT)
IC=30mA, IB=3.0mA 0.20 V
V
CE(SAT)
IC=30mA, IB=3.0mA, TA=65oC 0.30 V
V
CE(SAT)
IC=100mA, IB=10mA 0.28 V
V
CE(SAT)
IC=300mA, IB=30mA 0.50 V
V
BE(SAT)
IC=30mA, IB=3.0mA 0.75 0.95 V
V
BE(SAT)
IC=100mA, IB=10mA 1.20 V
V
BE(SAT)
IC=300mA, IB=30mA 1.70 V
h
FE
VCE=0.4V, IC=30mA 30 120
h
FE
VCE=0.5V, IC=100mA 25
SOT-23 CASE
CMPT3646
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT3646 type is an NPN Silicon Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, ultra high speed
switching applications.
Marking code is C2R.
171
R2
SYMBOL TEST CONDITIONS MIN MAX UNITS
h
FE
VCE=1.0V, IC=300mA 15
f
T
VCE=10V, IC=30mA, f=100MHz 350 MHz
C
ob
VCB=5.0V, IE=0, f=1.0MHz 5.0 pF
C
ib
VBE=0.5V, IC=0, f=1.0MHz 8.0 pF
t
on
VCC=10V, IC=300mA, IB1=30mA 18 ns
t
off
VCC=10V, IC=300mA, IB1=IB2=30mA 28 ns
t
S
VCC=10V, IC=IB1=IB2=10mA 18 ns
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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