CENTR CMPT3019 Datasheet
CMPT3019
NPN SILICON TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
Collector Current (Peak) I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
CBO
CEO
EBO
C
CM
D
JA
stg
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPT3019 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for very high current, general
purpose amplifier applications.
Marking Code is C3A.
120 V
80 V
7.0 V
500 A
1.0 A
350 mW
-65 to +150 oC
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
h
FE
h
FE
h
FE
h
FE
f
T
C
ob
C
ib
NF VCE=10V, IC=100mA, RS=1kΩ, f=1.0kHz 4.0 dB
VCB=90V 10 nA
VEB=5.0V 10 nA
IC=100µA 120 V
IC=30mA 80 V
IE=100µA 7.0 V
IC=150mA, IB=15mA 0.2 V
IC=500mA, IB=50mA 0.5 V
IC=150mA, IB=15mA 1.1 V
VCE=10V, IC=0.1mA 50
VCE=10V, IC=10mA 90
VCE=10V, IC=150mA 100 300
VCE=10V, IC=500mA 50
VCE=10V, IC=50mA, f=1.0MHz 100 MHz
VCB=10V, IE=0, f=1.0MHz 12 pF
VEB=0.5V, IC=0, f=1.0MHz 60 pF
166
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
167
R2
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