CENTR CMPDM7002A Datasheet
CMPDM7002A
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
SOT-23 CASE
Central
Semiconductor Corp.
TM
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPDM7002A is special version of the 2N7002
Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel
DMOS Process, designed for high speed pulsed
amplifier and driver applications. This special
device offers low r
DS(ON)
and low V
DS (ON).
Marking Code is C702A.
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Drain-Source Voltage V
DS
60 V
Drain-Gate Voltage V
DG
60 V
Gate-Source Voltage V
GS
40 V
Continuous Drain Current I
D
280 mA
Continuous Source Current (Body Diode) I
S
280 mA
Maximum Pulsed Drain Current I
DM
1.5 A
Maximum Pulsed Source Current I
SM
1.5 A
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
GSSF
VGS=20V, VDS=0V 100 nA
I
GSSR
VGS=20V, VDS=0V 100 nA
I
DSS
VDS=60V, VGS=0V 1.0 µA
I
DSS
VDS=60V, VGS=0V, Tj=125°C 500 µA
I
D(ON)
VGS=10V, V
DS
≥ 2V
DS(ON)
500 mA
BV
DSS
VGS=0V, ID=10µA 60 V
V
GS(th)
VDS=VGS, ID=250µA 1.0 2.5 V
V
DS(ON)
VGS=10V, ID=500mA 1.0 V
V
DS(ON)
VGS=5.0V, ID=50mA 0.15 V
r
DS(ON)
VGS=10V, I
D
=500mA 2.0 Ω
r
DS(ON)
VGS=10V, ID=500mA, T
j
=125°C 3.5 Ω
r
DS(ON)
VGS=5.0V, I
D
=50mA 3.0 Ω
r
DS(ON)
VGS=5.0V, ID=50mA, T
j
=125°C 5.0 Ω
g
FS
V
DS
≥ 2V
DS(ON)
, ID=200mA 80 mmhos
C
rss
VDS=25V, VGS=0, f=1.0MHz 5.0 pF
C
iss
VDS=25V, VGS=0, f=1.0MHz 50 pF
C
oss
VDS=25V, VGS=0, f=1.0MHz 25 pF
t
on
VDD=30V, VGS=10V, ID=200mA, 20 ns
t
off
R
G
=25Ω, RL=150Ω 20 ns
V
SD
VGS=0V, IS=400mA 1.2 V
R0 ( 05-December 2001)
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPDM7002A
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
R0 ( 05-December 2001)
LEAD CODE:
1) Gate
2) Source
3) Drain
Marking Code: C702A
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