CENTR CMPD6001S, CMPD6001C, CMPD6001A, CMPD6001 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD6001
series types are silicon switching diodes manufactured by the epitaxial planar process,
designed for switching applications requiring a
extremely low leakage diode.
The following configurations are available:
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
75 V
Peak Repetitive Reverse Voltage V
RRM
100 V
Continuous Forward Current I
F
250 mA
Peak Repetitive Forward Current I
FRM
250 mA
Forward Surge Current, tp=1 µsec. I
FSM
4000 mA
Forward Surge Current, tp=1 sec. I
FSM
1000 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
VR=75V 500 pA
V
BR
IR=100µA 100 V
V
F
IF=1.0mA 0.85 V
V
F
IF=10mA 0.95 V
V
F
IF=100mA 1.1 V
C
T
VR=0, f =1.0 MHz 2.0 pF
t
rr
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 3.0 µs
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 ( 01-Mar 2001)
CMPD6001 SINGLE MARKING CODE: ULO
CMPD6001A DUAL, COMMON ANODE MARKING CODE: ULA
CMPD6001C DUAL, COMMON CATHODE MARKING CODE: ULC
CMPD6001S DUAL, IN SERIES MARKING CODE: ULS
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
Pin Configuration
R1 ( 01-Mar 2001)
CMPD6001C CMPD6001SCMPD6001 CMPD6001A
N.C. A
C A1, A2
A2C2C1 A1
C1, C2
C1 A2
A1, C2
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