CENTR CMPD4150 Datasheet

CMPD4150

HIGH CURRENT

HIGH SPEED

SWITCHING DIODE

SOT-23 CASE

MAXIMUM RATINGS (TA=25oC)

SYMBOL UNITS

Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 µsec. I
Forward Surge Current, tp=1 sec. I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ

R
RRM

F
FRM
FSM
FSM

D

JA

TM

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR
CMPD4150 type is an ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.

Marking code is ABA.

50 V

50 V
250 mA
250 mA
4000 mA
1000 mA
350 mW

stg

-65 to +150
357 oC/W

o

C

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

I

R

V

F

V

F

V

F

V

F

V

F

C

T

t

rr

VR=50V 100 nA
IF=1.0mA 0.54 0.62 V
IF=10mA 0.66 0.74 V
IF=50mA 0.76 0.86 V
IF=100mA 0.82 0.92 V
IF=200mA 0.87 1.0 V
VR=0, f=1 MHz 4.0 pF
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 4.0

ns

136

All dimensions in inches (mm).

NO
CONNECTION

A

C

R2

137