CENTR CMKT2222A Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2222A
type is a dual NPN small signal switching
transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose and switching applications.
Marking Code is K22.
MAXIMUM RATINGS: (TA=25OC)
SYMBOL UNITS
Collector-Base Voltage V
CBO
75 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I
C
600 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150
O
C
Thermal Resistance Θ
JA
357
O
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25
O
C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
VCB=60V 10 nA
I
CBO
VCB=60V, TA=125
O
C10µA
I
CEV
VCE=60V, VEB=3.0V 10 nA
I
EBO
VEB=3.0V 10 nA
BV
CBO
I
C
=10µA75 V
BV
CEO
IC=10mA 40 V
BV
EBO
I
E
=10µA 6.0 V
V
CE(SAT)
IC=150mA, IB=15mA 0.3 V
V
CE(SAT)
IC=500mA, IB=50mA 1.0 V
V
BE(SAT)
IC=150mA, IB=15mA 0.6 1.2 V
V
BE(SAT)
IC=500mA, IB=50mA 2.0 V
h
FE
VCE=10V, IC=0.1mA 35
h
FE
VCE=10V, IC=1.0mA 50
h
FE
VCE=10V, IC=10mA 75
h
FE
VCE=1.0V, IC=150mA 50
h
FE
VCE=10V, IC=150mA 100 300
h
FE
VCE=10V, IC=500mA 40
CMKT2222A
ULTRAmini
TM
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SWITCHING TRANSISTORS
SOT-363 CASE
Central
Semiconductor Corp.
TM
R0 ( 28-September 2001)
Central
Semiconductor Corp.
TM
SOT-363 CASE - MECHANICAL OUTLINE
CMKT2222A
ULTRAmini
TM
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SWITCHING TRANSISTORS
R0 ( 28-September 2001)
MARKING CODE: K22
ELECTRICAL CHARACTERISTICS PER TRANSISTOR CONTINUED: (TA=25OC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
f
T
VCE=20V, IC=20mA, f=100MHz 300 MHz
C
ob
VCB=10V, IE=0, f=1.0MHz 8.0 pF
C
ib
VEB=0.5V, IC=0, f=1.0MHz 25 pF
h
ie
VCE=10V, I
C
=1.0mA, f=1.0kHz 2.0 8.0 kΩ
h
ie
VCE=10V, I
C
=10mA, f=1.0kHz 0.25 1.25 kΩ
h
re
VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10
-4
h
re
VCE=10V, IC=10mA, f=1.0kHz 4.0 x10
-4
h
fe
VCE=10V, IC=1.0mA, f=1.0kHz 50 300
h
fe
VCE=10V, IC=10mA, f=1.0kHz 75 375
h
oe
VCE=10V, I
C
=1.0mA, f=1.0kHz 5.0 35 µmhos
h
oe
VCE=10V, I
C
=10mA, f=1.0kHz 25 200 µmhos
rb'C
c
VCB=10V, IE=20mA, f=31.8MHz 150 ps
NF VCE=10V, IC=100mA, R
S
=1.0kΩ, f=1.0kHz 4.0 dB
t
d
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 ns
t
r
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 25 ns
t
s
VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns
t
f
VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns
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