CENTR CMKT2207 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2207
type is a dual complementary silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a ULTRAmini™ surface mount
package, designed for small signal general
purpose and switching applications.
Marking Code is K70.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
NPN (Q1) PNP (Q2) UNITS
Collector-Base Voltage V
CBO
75 60 V
Collector-Emitter Voltage V
CEO
40 60 V
Emitter-Base Voltage V
EBO
6.0 5.0 V
Collector Current I
C
600 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
CMKT2207
ULTRAmini
™
SURFACE MOUNT
COMPLEMENTARY TRANSISTORS
SOT-363 CASE
Central
Semiconductor Corp.
TM
NPN (Q1) PNP
(Q2)
SYMBOL TEST CONDITIONS MIN
MAX MIN MAX UNITS
I
CBO
VCB=60V - 10 - - nA
I
CBO
VCB=50V - - - 10 nA
I
CBO
VCB=60V, TA=125°C - 10 - - nA
I
CBO
VCB=50V, TA=125°C - - - 10 nA
I
EBO
VEB=3.0V - 10 - - nA
I
CEV
VCE=60V, V
EB(OFF)
=3.0V - 10 - - nA
I
CEV
VCE=30V, V
EB(OFF)
=500mV - - - 50 nA
BV
CBO
I
C
=10µA75-60-V
BV
CEO
IC=10mA 40 - 60 - V
BV
EBO
I
E
=10µA 6.0 - 5.0 - V
V
CE(SAT)
IC=150mA, IB=15mA - 0.3 - 0.4 V
V
CE(SAT)
IC=500mA, IB=50mA - 1.0 - 1.6 V
V
BE(SAT)
IC=150mA, IB=15mA 0.6 1.2 - 1.3 V
V
BE(SAT)
IC=500mA, IB=50mA - 2.0 - 2.6 V
h
FE
VCE=10V, IC=0.1mA 35 - 75 -
h
FE
VCE=10V, IC=1.0mA 50 - 100 -
h
FE
VCE=10V, IC=10mA 75 - 100 -
h
FE
VCE=10V, IC=150mA 100 300 100 300
h
FE
VCE=1.0V, IC=150mA 50 - - -
h
FE
VCE=10V, IC=500mA 40 - 50 -
R0 ( 9-October 2001)
Central
Semiconductor Corp.
TM
CMKT2207
ULTRAmini
™
SURFACE MOUNT
COMPLEMENTARY TRANSISTORS
R0 ( 9-October 2001)
NPN (Q1)
PNP (Q2)
SYMBOL TEST CONDITIONS MIN
MAX MIN MAX UNITS
f
T
VCE=20V, IC=20mA, f=100MHz 300 - - - MHz
f
T
VCE=20V, IC=50mA, f=100MHz - - 200 - MHz
C
ob
VCB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF
C
ib
VEB=0.5V, IC=0, f=1.0MHz - 25 - pF
C
ib
VEB=2.0V, IC=0, f=1.0MHz - - - 30 pF
h
ie
VCE=10V, I
C
=1.0mA, f=1.0kHz 2.0 8.0 - - kΩ
h
ie
VCE=10V, I
C
=10mA, f=1.0kHz 0.25 1.25 - - kΩ
h
re
VCE=10V, IC=1.0mA, f=1.0kHz - 8.0 - - x10-4
h
re
VCE=10V, IC=10mA, f=1.0kHz - 4.0 - - x10-4
h
fe
VCE=10V, IC=1.0mA, f=1.0kHz 50 300 - -
h
fe
VCE=10V, IC=10mA, f=1.0kHz 75 375 - -
h
oe
VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 - - µmhos
h
oe
VCE=10V, IC=10mA, f=1.0kHz 25 200 - - µmhos
rb'C
c
VCB=10V, IE=20mA, f=31.8MHz 150 - - ps
NF VCE=10V, IC=100µA, R
S
=1.0kΩ, f=1.0kHz - 4.0 - dB
t
on
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 45 ns
t
d
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns
t
r
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 40 ns
t
off
VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 100 ns
t
s
VCC=30V, IC=150mA, IB1=IB2=15mA - 225 - - ns
t
s
VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 80 ns
t
f
VCC=30V, IC=150mA, IB1=IB2=15mA - 60 - - ns
t
f
VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 30 ns
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1 Q1 = NPN
2) Base Q1 Q2 = PNP
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
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