CENTR CMKD6263 Datasheet
FEATURES:
• MEETS GALVANIC ISOLATION
REQUIREMENTS OF IEEE 1394
• HIGH VOLTAGE (70V)
• ULTRAmini™ PACKAGE
• REQUIRES LESS BOARD SPACE THAN 3
INDIVIDUAL DIODES
• LOW FORWARD VOLTAGE
MAXIMUM RATINGS: PER DIODE (TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
70 V
Continuous Forward Current I
F
15 mA
Forward Surge Current, tp=1.0 s I
FSM
50 mA
Power Dissipation P
D
250 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS: PER DIODE (TA=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
BV
R
IR=10µA 70 V
V
F
IF=1.0mA 395 410 mV
I
R
VR=50V 98 200 nA
C
T
VR=0V, f=1.0MHz 2.0 pF
t
rr
I
R=IF
=10mA, Irr=1mA, R
L
=100Ω 5.0 ns
CMKD6263
ULTRAmini
™
TRIPLE ISOLATED
HIGH VOLTAGE
SCHOTTKY DIODE
SOT-363 CASE
Central
Semiconductor Corp.
TM
R0 ( 30-August 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263 contains three Galvanically isolated, High Voltage Silicon
Schottky diodes, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching
applications requiring a low forward voltage drop. MARKING CODE: K63.
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
Central
Semiconductor Corp.
TM
SOT-363 CASE - MECHANICAL OUTLINE
CMKD6263
TRIPLE ISOLATED
HIGH VOLTAGE
SCHOTTKY DIODE
R0 ( 30-August 2001)
MARKING CODE: K63
D1 D2 D3
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