CENTR CMHD4150 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHD4150
type is a high speed silicon switching diode
manufactured by the epitaxial planar process, in
an epoxy molded surface mount package,
designed for high speed switching applications.
Marking code is C50
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
50 V
Peak Repetitive Reverse Voltage V
RRM
50 V
Continuous Forward Current I
F
250 mA
Peak Repetitive Forward Current I
FRM
250 mA
Forward Surge Current, tp=1 msec. I
FSM
4000 mA
Forward Surge Current, tp=1 sec. I
FSM
1000 mA
Power Dissipation P
D
400 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
312.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS MIN MAX UNITS
I
R
VR=50V 100 nA
V
F
IF=1.0mA 0.54 0.62 V
V
F
IF=10mA 0.66 0.74 V
V
F
IF=50mA 0.76 0.86 V
V
F
IF=100mA 0.82 0.92 V
V
F
IF=200mA 0.87 1.0 V
C
T
VR=0, f=1 MHz 4.0 pF
t
rr
IR=IF=10mA, R
L
=100Ω, Rec. to 1.0mA 4.0 ns
CMHD4150
SURFACE MOUNT
HIGH SPEED SWITCHING DIODE
SOD-123 CASE
Central
Semiconductor Corp.
TM
R0 ( 24-August 2001)
Central
Semiconductor Corp.
TM
SOD-123 CASE - MECHANICAL OUTLINE
CMHD4150
SURFACE MOUNT
HIGH SPEED SWITCHING DIODE
R0 ( 24-August 2001)
MARKING CODE: C50
LEAD CODE:
1) Cathode
2) Anode
A
D
1
B
G
C
DIMENSIONS
INCHES MILLIMETERS
SYMBOL
A 0.037 0.053 0.95 1.35
B - 0.005 - 0.12
C - 0.008 - 0.20
D 0.055 0.071 1.40 1.80
E 0.098 0.112 2.50 2.84
F 0.140 0.154 3.55 3.90
G 0.010 - 0.25 H 0.020 0.028 0.50 0.70
MIN MAX MIN MAX
2
H
SOD-123 (REV:R3)
FE
R3
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