CENTR CMHD3595 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHD3595
is a Silicon Diode, manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high conductance
applications requiring low leakage.
Marking Code is C95.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage V
RRM
150 V
Peak Working Reverse Voltage V
RWM
125 V
Average Forward Current I
O
150 mA
Forward Steady-State Current I
F
225 mA
Recurrent Peak Forward Current i
f
600 mA
Peak Forward Surge Current (1.0s pulse) I
FSM
500 mA
Peak Forward Surge Current (1.0µs pulse) I
FSM
4.0 A
Power Dissipation P
D
400 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
312.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS MIN MAX
UNITS
BV
R
IR=100µA 150 V
I
R
VR=125V 1.0 nA
I
R
VR=125V, TA=125°C 500 nA
I
R
VR=125V, TA=150°C 3.0 µA
I
R
VR=30V, TA=125°C 300 nA
V
F
IF=1.0mA 0.54 0.69 V
V
F
IF=5.0mA 0.62 0.77 V
V
F
IF=10mA 0.65 0.80 V
V
F
IF=50mA 0.75 0.88 V
V
F
IF=100mA 0.79 0.92 V
V
F
IF=200mA 0.83 1.00 V
C
T
VR=0, f=1.0MHz 8.0 pF
t
rr
VR=3.5V, If=10mA, R
L
=1.0kΩ 3.0 µs
CMHD3595
LOW LEAKAGE
SILICON DIODE
SOD-123 CASE
Central
Semiconductor Corp.
TM
R2 ( 2-November 2001)
LEAD CODE:
1) Cathode
2) Anode
Central
Semiconductor Corp.
TM
SOD-123 CASE - MECHANICAL OUTLINE
CMHD3595
LOW LEAKAGE
SILICON DIODE
A
R2 ( 2-November 2001)
MARKING CODE: C95
D
B
C
DIMENSIONS
INCHES MILLIMETERS
SYMBOL
A 0.037 0.053 0.95 1.35
B - 0.005 - 0.12
C - 0.008 - 0.20
D 0.055 0.071 1.40 1.80
E 0.098 0.112 2.50 2.84
F 0.140 0.154 3.55 3.90
G 0.010 - 0.25 H 0.020 0.028 0.50 0.70
MIN MAX MIN MAX
SOD-123 (REV:R3)
1
FE
G
2
H
R3
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