CENTR CMHD2003 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMHD2003 is a Silicon Switching Diode,
manufactured by the epitaxial planar
process, epoxy molded in a SOD-123
surface mount package, designed for
applications requiring high voltage
capability. Marking Code is C03.
CMHD2003
HIGH VOLTAGE
SWITCHING DIODE
SOD-123 CASE
Central
Semiconductor Corp.
TM
R2 ( 2-November 2001)
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
UNITS
Continuous Reverse Voltage V
R
250 V
Continuous Forward Current I
F
250 mA
Average Rectified Current I
O
200 mA
Peak Repetitive Forward Current I
FRM
625 mA
Forward Surge Current, tp<1s, TC=25°C I
FSM
1.0 A
Power Dissipation P
D
400 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
312.5 °C/W
ELECTRICAL
CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST
CONDITIONS MIN
TYP MAX UNITS
I
R
VR=200V 100 nA
I
R
VR=200V, TC=100°C 15 µA
V
F
IF=100mA 1.0 V
C
T
VR=0, f=1 MHz 1.5 pF
t
rr
IF=IR=30mA, R
L
=100Ω, Rec. to 3.0mA 50 ns
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOD-123
CMHD2003
HIGH VOLTAGE
SWITCHING DIODE
R2 ( 2-November 2001)
A
Marking Code is C03.
Lead Code:
1) Cathode
2) Anode
D
B
G
C
DIMENSIONS
INCHES MILLIMETERS
SYMBOL
A 0.037 0.053 0.95 1.35
B - 0.005 - 0.12
C - 0.008 - 0.20
D 0.055 0.071 1.40 1.80
E 0.098 0.112 2.50 2.84
F 0.140 0.154 3.55 3.90
G 0.010 - 0.25 H 0.020 0.028 0.50 0.70
MIN MAX MIN MAX
SOD-123 (REV:R3)
1
FE
2
H
R3
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