CENTR CMDD6001 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDD6001
type is a silicon switching diode manufactured by
the epitaxial planar process, epoxy molded in a
SUPERmini
TM
surface mount package, designed
for switching applications requiring a extremely
low leakage diode.
THE MARKING CODE IS C61.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
75 V
Peak Repetitive Reverse Voltage V
RRM
100 V
Continuous Forward Current I
F
250 mA
Peak Repetitive Forward Current I
FRM
250 mA
Forward Surge Current, tp=1.0 µsec. I
FSM
4000 mA
Forward Surge Current, tp=1.0 sec. I
FSM
1000 mA
Power Dissipation P
D
250 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
VR=75V 500 pA
V
BR
IR=100µA 100 V
V
F
IF=1.0mA 0.85 V
V
F
IF=10mA 0.95 V
V
F
IF=100mA 1.1 V
C
T
VR=0, f=1.0MHz 2.0 pF
t
rr
IR=IF=10mA, R
L
=100Ω, Rec. to 1.0mA 3.0 µs
CMDD6001
SUPERmini
TM
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
SOD-323 CASE
Central
Semiconductor Corp.
TM
R1 ( 20-July 2001)
LEAD CODE:
1) Cathode
2) Anode
Central
Semiconductor Corp.
TM
SOD-323 - MECHANICAL OUTLINE
CMDD6001
SUPERmini
TM
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
R1 ( 20-July 2001)
MARKING CODE: C61
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