CENTR CMDD2004 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDD2004
type is a high voltage silicon switching diode
manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini™ surface mount
package, designed for applications requiring high
voltage capability. Marking code is C24.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage V
R
240 V
Peak Repetitive Reverse Voltage V
RRM
300 V
Peak Repetitive Reverse Current I
O
200 mA
Continuous Forward Current I
F
225 mA
Peak Repetitive Forward Current I
FRM
625 mA
Forward Surge Current, tp=1 µsec. I
FSM
4000 mA
Forward Surge Current, tp=1 sec. I
FSM
1000 mA
Power Dissipation P
D
250 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNIT
B
VR
IR=100µA 300 V
I
R
VR=240V 100 nA
I
R
VR=240V, TA=150°C 100 µA
V
F
IF=100mA 1.0 V
C
T
VR=0, f=1 MHz 5.0 pF
t
rr
IF=IR=30mA, Rec. To 3.0mA, R
L
=100Ω 50 ns
CMDD2004
SUPERmini™
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
Central
Semiconductor Corp.
TM
R1 ( 7-August 2001)
SOD-323 CASE
LEAD CODE:
1) Cathode
2) Anode
Central
Semiconductor Corp.
TM
SOD-323 CASE - MECHANICAL OUTLINE
CMDD2004
SUPERmini™
SURFACE MOUNT
HIGH VOLTAGE SWITCHING
DIODE
R1 ( 7-August 2001)
MARKING CODE: C24
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