CENTR CBRHD-10, CBRHD-06, CBRHD-04, CBRHD-02 Datasheet

TM

CBRHD SERIES

Central

Semiconductor Corp.

HIGH DENSITY SURF ACE MOUNT

½ AMP DUAL IN LINE

BRIDGE RECTIFIER

FEATURES:

• Truly ef ficient use of board space, requires

TM

only 42mm² of board space vs. 120mm² of board
space for industry standard 1.0 Amp surface
mount bridge rectifier.

HD

BRIDGE

HDDIP CASE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted
in a durable epoxy surface mount molded case, utilizing glass passivated chips.

MAXIMUM RA TINGS: (TA=25°C unless otherwise noted)

SYMBOL -02 -04 -06 -10* UNITS

Peak Repetitive Reverse Voltage V
DC Blocking Voltage V
RMS Reverse Voltage V
Average Forward Current (TA=40°C)(1) I
Average Forward Current (TA=40°C)(2) I
Peak Forward Surge Current I
Operating and Storage
Junction T emperature TJ,T

O
O
FSM

• 50% higher density (amps/mm²) than the industry

standard 1.0 Amp surface mount bridge rectifier.

• Glass passivated chips for high reliability .

CBRHD CBRHD CBRHD CBRHD

RRM

R
R(RMS)

stg

200 400 600 1000 V
200 400 600 1000 V

140 280 420 700 V

0.5 A

0.8 A
30 A

-65 to +150 °C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

V

F

I

R

I

R

C

J

(1) Mounted on a Glass-Epoxy P.C.B.
(2) Mounted on a Ceramic P.C.B.
*Available on special order, please consult factory.

IF=400mA (Per Diode) 1.0 V
VR=Rated V
VR=Rated V
VR=4.0V, f=1.0MHz 20 pF

RRM

, TA=125°C 500 mA

RRM

104

5.0 mA

All dimensions in inches (mm).

TOP VIEW

105