CENTR CBCX69, CBCX68 Datasheet
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCX68,
CBCX69 types are complementary silicon
transistor manufactured by epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Emitter Voltage V
CES
25 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Collector Current-Peak I
CM
2.0 A
Base Current I
B
100 mA
Base Current Peak I
BM
200 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Temperature Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
VCB=25V 100 nA
I
CBO
VCB=25V, TA=150°C µA
I
EBO
VEB=5.0V 10 µA
BV
CBO
IC=10µA 25 V
BV
CEO
IC=10mA 20 V
BV
EBO
IE=1.0µA 5.0 V
V
CE(SAT)IC
=1.0A, IB=100mA 0.5 V
V
BE(ON)
VCE=10V,IC=5.0mA 0.6 V
V
BE(ON)
VCE=1.0V, IC=1.0A 1.0 V
h
FE
VCE=10V,IC=500mA 50
h
FE
VCE=1.0,IC=500mA 85 375
h
FE
VCE=1.0V, IC=1.0A 60
f
T
VCE=5.0V,IC=10mA, f=20MHz 65 MHz
CBCX68
CBCX69
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R4 ( 19-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-89
CBCX68
CBCX69
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
B
R4 ( 19-December 2001)
BOTTOM VIEW
A
F
H
1
E
2
G
3
C
J
L
K
R3
M
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