CENTR CBCP69, CBCP68 Datasheet
66
Central
Semiconductor Corp.
TM
SOT-223 CASE
CBCP68 NPN
CBCP69 PNP
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCP68,
CBCP69 types are complementary silicon
transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Collector-Emitter Voltage V
CES
25 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Collector Current-Peak I
CM
2.0 A
Base Current I
B
100 mA
Base Current-Peak I
BM
200 mA
Power Dissipation P
D
2.0 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 oC
Thermal Resistance Q
JA
62.5 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
VCB=25V 10 mA
I
CBO
VCB=25V, TA=150oC 1.0 mA
I
EBO
VEB=5.0V 10 mA
BV
CBO
IC=10mA 25 V
BV
CEO
IC=10mA 20 V
BV
EBO
IE=1.0mA 5.0 V
V
CE(SAT)
IC=1.0A, IB=100mA 0.5 V
V
BE(ON)
VCE=10V, IC=5.0mA 0.6 V
V
BE(ON)
VCE=1.0V, IC=1.0A 1.0 V
h
FE
VCE=10V, IC=5.0mA 50
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