CENTR CBAS17 Datasheet

CBAS17

LOW VOLTAGE STABISTOR

SOT-23 CASE

MAXIMUM RATINGS (TA=25oC)

SYMBOL UNITS

Peak Repetitive Forward Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ

FRM

D

JA

TM

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBAS17
type is a planar epitaxial silicon switching
diode, designed for low voltage stabilizing
applications.

Marking code is A91.

250 mA
350 mW

stg

-65 to +150
357 oC/W

o

C

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

V
V
V
V
V
I
C

F
F
F
F
F

R

T

IF=0.1mA .580 .665 .680 V
IF=1.0mA .665 .745 .760 V
IF=5.0mA .725 .805 .820 V
IF=10mA .750 .825 .840 V
IF=100mA .870 .920 .960 V
VR=4.0V 5.0 µA
VR=0, f=1 MHz 140 pF

64

All dimensions in inches (mm).

NO
CONNECTION

A

C

R2

65